Angle-resolved x-ray photoelectron spectroscopy study of GeOx growth by plasma post-oxidation

The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge...

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Published in中国物理B：英文版 Vol. 26; no. 10; pp. 453 - 458
Main Author 赵治乾 张静 王晓磊 魏淑华 赵超 王文武
Format Journal Article
LanguageEnglish
Published 01.10.2017
Subjects
PPO
互补金属氧化物半导体
生长机理
生长过程
离子氧化
等离子体氧化
角分辨光电子能谱
金属氧化物半导体场效应晶体管
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/10/108201

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Summary:The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge^1＋ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge^1＋ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor （MOS） field-effect transistor （CMOSFET） devices.
Bibliography:Ge, plasma post-oxidation, MOS, XPS
11-5639/O4
Zhiqian Zhao1, Jing Zhang1, Xiaolei Wang2,3, Shuhua Wei1, Chao Zhao2,3, Wenwu Wang2,3（ 1Microelectronics Department, North China University of Technology, Beijing 100041, China ;2Key Laboratory of Microelectromcs Devices ＆ Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China ;3 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China）
The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge^1＋ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge^1＋ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor （MOS） field-effect transistor （CMOSFET） devices.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/10/108201