CsPbBr3-based photodetector with a multilayer architecture and asymmetric metal electrodes

• Published in: Materials science in semiconductor processing Vol. 185; p. 108898
• Main Authors: Torres, O.G., Gordillo, G., Rossi, I.M., Roa-Rojas, J.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.01.2025
• Subjects: Electric properties; Layered device; Metal halide perovskite; Optical response; Optical response; Metal halide perovskite; Layered device; Electric properties
• DOI: 10.1016/j.mssp.2024.108898
• ISSN: 1369-8001

In this work, the fabrication of inorganic perovskite thin films (CsPbBr3) and the construction of low-cost, high-response electronic photodetectors based on this material are presented. The films were synthesized by thermal evaporation in a high vacuum using CsBr and PbBr2, showing a single-phase composition, high uniformity in grain sizes with an average value of 1.17 μm, and good substrate coverage, which favors electrical transport. Reflectance and transmittance analyses were performed, obtaining an optical band gap of Eg = 2.36 eV and an absorption coefficient of α≈104cm−1, comparable to semiconductors like GaAs and CdTe. A planar Au/CsPbBr3/Au photodetector prototype was built to measure the electrical response under UV illumination of 400 nm at power levels between 0 and 63 mW/cm2, and another with asymmetric Au/CsPbBr3/Ag electrodes forming a Schottky junction to create a self-powered photodetector. Additionally, a multilayer system Au/TiO2/CsPbBr3/P3HT/Au was developed, coupled to a low-cost electronic system to measure the voltage response of each prototype.