10T SRAM Using Half- V} Precharge and Row-Wise Dynamically Powered Read Port for Low Switching Power and Ultralow RBL Leakage - Maroof, Naeem; Bai-Sun Kong (IEEE transactions on very large scale integration (VLSI) systems, 2017)
Keywords: 10T; charge recycling; Leakage currents; leakage reduction; low power; Power dissipation; precharging; Rails; Sensors; single ended (SE) read bitline (RBL); SRAM cells; static random access memory (SRAM); Transistors; virtual rails