Semiconductor lasers
This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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| Published in | Proceedings of the IEEE Vol. 54; no. 10; pp. 1276 - 1290 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
1966
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| Subjects | |
| Online Access | Get full text |
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| Abstract | This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described. |
|---|---|
| AbstractList | This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described. |
| Author | Nathan, M.I. |
| Author_xml | – sequence: 1 givenname: M.I. surname: Nathan fullname: Nathan, M.I. organization: IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y |
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| CODEN | IEEPAD |
| CitedBy_id | crossref_primary_10_1109_5_52226 crossref_primary_10_1109_TAES_1968_5408936 crossref_primary_10_1109_TNS_1967_4324775 crossref_primary_10_1063_1_1683687 crossref_primary_10_1007_BF00618361 crossref_primary_10_1143_JJAP_7_409 crossref_primary_10_1109_JQE_1968_1075041 crossref_primary_10_1063_1_1709310 crossref_primary_10_1063_1_3070929 crossref_primary_10_1109_MSPEC_1972_5218747 crossref_primary_10_1007_BF01586874 crossref_primary_10_1002_pssa_19700020225 crossref_primary_10_1063_1_3022625 crossref_primary_10_1088_0034_4885_38_3_001 crossref_primary_10_1109_MSPEC_1967_5216310 crossref_primary_10_1002_pssa_19700010210 crossref_primary_10_1109_MSPEC_1968_5215476 crossref_primary_10_1002_pssb_19680250102 crossref_primary_10_1080_00207218108901308 |
| Cites_doi | 10.1063/1.1754170 10.1109/MSPEC.1965.5531711 10.1063/1.1753905 10.1109/PROC.1964.3382 10.1143/JJAP.3.425 10.1016/0038-1098(64)90403-X 10.1063/1.1754380 10.1103/PhysRev.123.1145 10.1016/0038-1101(64)90027-9 10.1063/1.1753833 10.1109/PROC.1964.3122 10.1103/PhysRev.140.A155 10.1063/1.1754420 10.1063/1.1753734 10.1063/1.1753836 10.1149/1.2425939 10.1070/PU1961v003n05ABEH003322 10.1016/0038-1098(63)90215-1 10.1016/0038-1098(64)90530-7 10.1063/1.1753832 10.1109/JQE.1966.1073794 10.1063/1.1754088 10.1109/TBC.1964.265814 10.1063/1.1753961 10.1063/1.1777371 10.1063/1.1754062 10.1016/0038-1101(63)90024-8 10.1109/PROC.1965.4522 10.1109/PROC.1963.2469 10.1063/1.1723586 10.1063/1.1754529 10.1063/1.1753937 10.1063/1.1708279 10.1063/1.1713729 10.1016/0031-9163(63)90307-X 10.1109/T-ED.1965.15443 10.1063/1.1723559 10.1063/1.1754104 10.1109/PROC.1963.2345 10.1063/1.1723572 10.1063/1.1729214 10.1147/rd.85.0543 10.1063/1.3047183 10.1063/1.1753898 10.1063/1.1754194 10.1149/1.2425611 10.1147/rd.71.0058 10.1103/PhysRevLett.11.152 10.1103/PhysRev.131.2070 10.1063/1.1754389 10.1016/0038-1101(65)90085-7 10.1063/1.1723609 10.1063/1.1753990 10.1147/rd.85.0532 10.1016/0038-1098(65)90161-4 10.1109/JQE.1966.1073802 10.1016/S0031-9163(64)90961-8 10.1109/JQE.1965.1072189 10.1063/1.1713302 10.1063/1.1703006 10.1063/1.1714015 10.1016/0038-1098(64)90250-9 10.1147/rd.103.0225 10.1109/JQE.1966.1073949 10.1002/pssb.19610010703 10.1149/1.2423346 10.1103/PhysRevLett.16.1193 10.1063/1.1754164 10.1103/PhysRev.133.A553 10.1109/PROC.1965.4494 10.1063/1.1754516 10.1063/1.1754377 10.1103/PhysRev.148.186 10.1063/1.1729767 10.3367/UFNr.0072.196010a.0161 10.1109/PROC.1965.3607 10.1103/PhysRevLett.9.366 10.1109/JQE.1966.1073832 10.1063/1.1708280 10.1063/1.1753706 10.1109/T-ED.1964.15331 10.1103/PhysRev.127.768 10.1063/1.1707800 10.1103/PhysRev.127.1559 10.1147/rd.94.0303 10.1109/JQE.1965.1072191 10.1147/rd.72.0155 10.1063/1.1754081 10.1063/1.1753710 10.1016/0038-1098(64)90259-5 10.1063/1.1753914 10.1063/1.1754578 10.1016/0038-1101(65)90022-5 10.1109/PROC.1965.3627 10.1063/1.1714018 10.1016/0038-1101(64)90069-3 |
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| References | ref56 carlson (ref107) 1965; 10 ref59 ref53 ref52 ref55 schiel (ref133) 1965; 53 ref54 chipaux (ref48) 1965 basov (ref37a) 1959; 37 ref50 chatterton (ref132) 1965; 53 (ref130) 0 ref46 ref45 ref47 ref42 stern (ref80) 1965 ref41 ref43 pilkuhn (ref71) 1964; 230 basov (ref34) 1965; 1 ref4 ref3 ref6 stern (ref17) 1966; 2 ref100 ref101 ref40 ref35 (ref37b) 1960; 10 ref30 ref32 smith (ref124) 0 hambleton (ref111) 1965; 15 ref38 klein (ref31) 1966 ref24 ref23 ref26 ref25 ref20 ref22 ref21 burns (ref81) 1963; 51 ahearn (ref106) 1966; qe 2 ref28 ref27 ref29 (ref76b) 1964; 230 konnerth (ref115) 0 melngailis (ref68) 0 basov (ref65) 1965; 161 ref13 benoit (ref61) 1965; 261 ref128 ref15 ref129 crowe (ref108) 0 ref14 pankove (ref83) 1965 ref126 nelson (ref74) 1963; 24 ref97 ref127 ref96 benoit (ref51) 1964; 259 ref99 ref11 ref125 (ref7b) 0 ref16 nelson (ref109) 1964; 52 phelan (ref39) 1966 basov (ref33) 1966 tietjen (ref66) 1965; 53 ref93 ref92 ref131 ref95 ref94 ref91 ref90 ref89 ref86 ref85 ref7a ref36b ref36a dumke (ref18) 0 eymard (ref49) 1966 basov (ref8) 1961 pilkuhn (ref76a) 1963; 51 butler (ref58) 1966 fenner (ref103) 0 basov (ref88) 1965; 7 basov (ref12) 1965; 161 ref84 lengyel (ref19) 1962 ref79 ref78 ref75 ref104 ref105 ref77 ref102 ref2 hurwitz (ref5a) 0 ref1 kelly (ref87) 1965; 12 melngailis (ref44) 1963; 51 ref5b ref70 ref73 ref72 ref110 ref119 ref67 ref117 ref69 ref118 ref64 ref63 ref116 ref113 ref114 vauilov (ref62) 1965; 164 niebuhr (ref112) 0 pilkuhn (ref82) 1965 ref60 ref122 ref123 ref120 cuff (ref57) 1964 basov (ref9) 1964; 155 ref121 marinace (ref98) 0 (ref10) 1964; 9 |
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| Snippet | This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present... |
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| SubjectTerms | Electron emission Gallium arsenide Laser transitions Optical materials Photonic crystals Probability Pump lasers Semiconductor lasers Semiconductor materials Stimulated emission |
| Title | Semiconductor lasers |
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