Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis

• Published in: Journal of semiconductors Vol. 43; no. 6; pp. 62803 - 74
• Main Authors: Wu, Hao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Zhang, Lin, Liu, Xinyu, Zhang, Guoqi
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.06.2022; Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China%Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China%Beijing Const-Intellectual Core Technology Co.Ltd,Beijing 100029,China%The Institute of Future Lighting,Academy for Engineering and Technology,Fudan University(FAET),Shanghai 200433,China; The Institute of Future Lighting,Academy for Engineering and Technology,Fudan University(FAET),Shanghai 200433,China
• Subjects: AlGaN/GaN; current transport mechanism; Schottky barrier diode; TiN; TiN; current transport mechanism; Schottky barrier diode; AlGaN/GaN

Abstract In this work, the optimization of reverse leakage current ( I R ) and turn-on voltage ( V T ) in recess-free AlGaN/GaN Schottky barrier diodes (SBDs) was achieved by substituting the Ni/Au anode with TiN anode. To explain this phenomenon, the current transport mechanism was investigated by...