Cu(In,Al)S 2 Thin Film Solar Cell
A Cu(In,Al)S 2 thin film solar cell has exhibited good adhesion to Mo-coated glass and comparatively high efficiency. The sputter-deposited metallic precursor was sulfurized and then treated in a KCN solution to remove a Cu x S impurity phase and an excessive Al compound from the film surface. When...
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Published in | Japanese Journal of Applied Physics Vol. 44; no. 3R; p. 1204 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.03.2005
|
Online Access | Get full text |
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Abstract | A Cu(In,Al)S
2
thin film solar cell has exhibited good adhesion to Mo-coated glass and comparatively high efficiency. The sputter-deposited metallic precursor was sulfurized and then treated in a KCN solution to remove a Cu
x
S impurity phase and an excessive Al compound from the film surface. When the precursor layer was Cu-rich, the treated sulfide film could be used as an efficient absorber material. It had the same band gap as CuInS
2
. The spectral response of the cell was increased in a short wavelength range. The bottom region of the film was considered to consist of a Cu(In,Al)S
2
alloy that enhanced the film adhesion to the Mo back contact. The film was analyzed using X-ray diffraction, electron probe microanalysis, scanning electron microscopy and field ion microscopy combined with focused ion beam technique. |
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AbstractList | A Cu(In,Al)S
2
thin film solar cell has exhibited good adhesion to Mo-coated glass and comparatively high efficiency. The sputter-deposited metallic precursor was sulfurized and then treated in a KCN solution to remove a Cu
x
S impurity phase and an excessive Al compound from the film surface. When the precursor layer was Cu-rich, the treated sulfide film could be used as an efficient absorber material. It had the same band gap as CuInS
2
. The spectral response of the cell was increased in a short wavelength range. The bottom region of the film was considered to consist of a Cu(In,Al)S
2
alloy that enhanced the film adhesion to the Mo back contact. The film was analyzed using X-ray diffraction, electron probe microanalysis, scanning electron microscopy and field ion microscopy combined with focused ion beam technique. |
Author | Inazu, Takuya Bhandari, Ramesh Kumar Kadowaki, Yuji Hashimoto, Yoshio Ito, Kentaro |
Author_xml | – sequence: 1 givenname: Takuya surname: Inazu fullname: Inazu, Takuya – sequence: 2 givenname: Ramesh Kumar surname: Bhandari fullname: Bhandari, Ramesh Kumar – sequence: 3 givenname: Yuji surname: Kadowaki fullname: Kadowaki, Yuji – sequence: 4 givenname: Yoshio surname: Hashimoto fullname: Hashimoto, Yoshio – sequence: 5 givenname: Kentaro surname: Ito fullname: Ito, Kentaro |
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CitedBy_id | crossref_primary_10_1016_j_jsamd_2017_04_002 crossref_primary_10_1016_j_jallcom_2011_08_016 crossref_primary_10_1016_j_sse_2011_02_005 crossref_primary_10_1143_JJAP_45_8592 crossref_primary_10_1002_pip_653 crossref_primary_10_1016_j_jssc_2013_08_005 crossref_primary_10_1002_pip_679 crossref_primary_10_1016_j_ijleo_2016_07_034 crossref_primary_10_1016_j_mseb_2020_114688 crossref_primary_10_1016_j_tsf_2011_06_066 crossref_primary_10_1155_2013_579453 crossref_primary_10_1016_j_jtice_2012_12_013 |
Cites_doi | 10.1143/JJAP.38.L748 10.1016/0927-0248(94)90135-X 10.1016/S0927-0248(97)00090-1 10.1016/j.tsf.2003.11.045 10.1143/JJAP.39.126 10.1016/0927-0248(94)90137-6 10.1016/S0927-0248(00)00395-0 10.1016/0169-4332(95)00236-7 10.1143/JJAP.43.L108 |
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References | 2004; 43 1994; 35 1997; 49 1996; 92 2000; 39 2001; 69 2004; 451–452 1999; 38 |
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