Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies

• Published in: Semiconductor science and technology Vol. 39; no. 7; pp. 75010 - 75019
• Main Authors: F Dela Rosa, L N, Publico, J B, F Cabello, N I, R Ferrolino, J P, P Juguilon, V P, M Verona, I C, Salvador, A A, Somintac, A S, De Los Reyes, A E, Bardolaza, H R, Estacio, E S
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.07.2024
• Subjects: below-band gap excitation; defects; gallium arsenide; midgap states; terahertz; two-step photoexcitation

Abstract In this work, the terahertz (THz) time-domain spectroscopy was employed in studying the carrier dynamics in low-temperature grown (LT-) and semi-insulating (SI-) gallium arsenide (GaAs) photoconductive antenna (PCA) at above- ( λ = 780 nm, E g = 1.59 eV) and below- ( λ = 1.55 µ m, E g 0.80...