The Growth Mechanism of a Conductive MOF Thin Film in Spray‐based Layer‐by‐layer Liquid Phase Epitaxy

• Published in: Angewandte Chemie Vol. 134; no. 43
• Main Authors: Zheng, Rui, Fu, Zhi‐Hua, Deng, Wei‐Hua, Wen, Yingyi, Wu, Ai‐Qian, Ye, Xiao‐Liang, Xu, Gang
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 24.10.2022
• Subjects: Biomimetic materials; Biomimetics; Chemistry; Crystal defects; Electrical measurement; Epitaxy; Film growth; Gas Sensing; Grain boundaries; Layer-by-Layer Growth; Liquid Phase Epitaxy; Liquid phases; Metal-organic frameworks; Microscopic analysis; Orientation; Thin Film; Thin films
• ISSN: 0044-8249; 1521-3757
• DOI: 10.1002/ange.202212797

The layer‐by‐layer liquid‐phase epitaxy (LBL‐LPE) method is widely used in preparing metal–organic framework (MOF) thin films with the merits of controlling thickness and out‐of‐plane orientation for superior performances in applications. The LBL‐LPE growth mechanism related to the grain boundary, structure defect, and orientation is critical but very challenging to study. In this work, a novel “in‐plane self‐limiting and self‐repairing” thin‐film growth mechanism is demonstrated by the combination study of the grain boundary, structure defect, and orientation of Cu3(HHTP)2‐xC thin film via microscopic analysis techniques and electrical measurements. This mechanism results a desired high‐quality MOF thin film with preferred in‐plane orientations at its bottom for the first time and is very helpful for optimizing the LBL‐LPE method, understanding the growth cycle‐dependent properties of MOF thin film, and inspiring the investigations of the biomimetic self‐repairing materials. A novel in‐plane self‐limited and self‐repairing growth mechanism was demonstrated for the preparation of LBL‐LPE thin films. The method provides a high‐quality MOF thin film with preferred in‐plane orientation at its bottom part.