A Simple Model Describing the Symmetric $I\hbox{--}V$ Characteristics of $\hbox{p}$ Polycrystalline Si/ $\hbox{n}$ Monocrystalline Si, and $\hbox{n}$ Polycrystalline Si/ $\hbox{p}$ Monocrystalline Si Junctions

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Published inIEEE journal of photovoltaics Vol. 4; no. 3; pp. 841 - 850
Main Authors Peibst, Robby, Romer, Udo, Hofmann, Karl Rudiger, Lim, Bianca, Wietler, Tobias F., Krugener, Jan, Harder, Nils-Peter, Brendel, Rolf
Format Journal Article
LanguageEnglish
Japanese
Published 01.05.2014
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Author Romer, Udo
Brendel, Rolf
Peibst, Robby
Hofmann, Karl Rudiger
Harder, Nils-Peter
Wietler, Tobias F.
Lim, Bianca
Krugener, Jan
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Cites_doi 10.1016/0038-1101(87)90076-1
10.1109/EDL.1985.26155
10.1109/T-ED.1983.21207
10.1109/IEDM.1986.191103
10.1063/1.3021091
10.1063/1.89694
10.1109/BIPOL.1989.69468
10.1109/16.97407
10.1109/T-ED.1980.20148
10.1109/PVSC.1990.111625
10.1063/1.335421
10.1109/T-ED.1982.21043
10.1109/T-ED.1979.19684
10.1109/16.24359
10.1109/JPHOTOV.2013.2238289
10.1016/0038-1101(90)90060-R
10.1002/pip.637
10.1002/j.1538-7305.1949.tb03645.x
10.1109/T-ED.1984.21606
10.1016/j.solmat.2013.09.017
10.1109/16.155885
10.1109/16.141239
10.1103/PhysRev.140.A569
10.1109/JSSC.1976.1050764
10.1063/1.338861
10.1109/JPHOTOV.2012.2204958
10.1016/0038-1101(89)90083-X
10.1109/16.556149
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References ref35
ref13
ref34
ref12
ref15
ref14
ref30
ref33
ref11
ref10
ref2
ref17
ref19
ref18
(ref1) 0
lindholm (ref5) 1985; 6
(ref28) 0
(ref26) 0
ref24
ref23
ng (ref16) 1986
ref25
ref20
ref22
ref21
(ref6) 0
ref27
(ref32) 0
ref29
ref8
ref7
ref4
ref3
kane (ref31) 1985
borden (ref9) 2008
References_xml – ident: ref27
  doi: 10.1016/0038-1101(87)90076-1
– volume: 6
  start-page: 363
  year: 1985
  ident: ref5
  article-title: heavily doped polysilicon-contact solar cells
  publication-title: IEEE Electron Device Letters
  doi: 10.1109/EDL.1985.26155
  contributor:
    fullname: lindholm
– ident: ref33
  doi: 10.1109/T-ED.1983.21207
– start-page: 32
  year: 1986
  ident: ref16
  article-title: a thermionic-diffusion model of polysilicon emitter
  publication-title: 1986 International Electron Devices Meeting
  doi: 10.1109/IEDM.1986.191103
  contributor:
    fullname: ng
– ident: ref7
  doi: 10.1063/1.3021091
– ident: ref34
  doi: 10.1063/1.89694
– ident: ref23
  doi: 10.1109/BIPOL.1989.69468
– start-page: 1149
  year: 2008
  ident: ref9
  article-title: Polysilicon tunnel junctions as alternates to diffused junctions
  publication-title: Proc 23rd Eur Photovoltaic Sol Energy Conf
  contributor:
    fullname: borden
– ident: ref21
  doi: 10.1109/16.97407
– year: 0
  ident: ref32
– year: 0
  ident: ref1
– ident: ref14
  doi: 10.1109/T-ED.1980.20148
– year: 0
  ident: ref6
– ident: ref8
  doi: 10.1109/PVSC.1990.111625
– ident: ref22
  doi: 10.1063/1.335421
– ident: ref12
  doi: 10.1109/T-ED.1982.21043
– ident: ref11
  doi: 10.1109/T-ED.1979.19684
– start-page: 578
  year: 1985
  ident: ref31
  article-title: Measurement of the emitter saturation current by a contactless photoconductivity decay method
  publication-title: Proc 18th IEEE Photovoltaic Spec Conf
  contributor:
    fullname: kane
– ident: ref20
  doi: 10.1109/16.24359
– ident: ref25
  doi: 10.1109/JPHOTOV.2013.2238289
– ident: ref19
  doi: 10.1016/0038-1101(90)90060-R
– ident: ref29
  doi: 10.1002/pip.637
– ident: ref30
  doi: 10.1002/j.1538-7305.1949.tb03645.x
– ident: ref15
  doi: 10.1109/T-ED.1984.21606
– ident: ref10
  doi: 10.1016/j.solmat.2013.09.017
– ident: ref24
  doi: 10.1109/16.155885
– year: 0
  ident: ref26
– ident: ref3
  doi: 10.1109/16.141239
– ident: ref18
  doi: 10.1103/PhysRev.140.A569
– ident: ref2
  doi: 10.1109/JSSC.1976.1050764
– ident: ref4
  doi: 10.1063/1.338861
– ident: ref35
  doi: 10.1109/JPHOTOV.2012.2204958
– ident: ref17
  doi: 10.1016/0038-1101(89)90083-X
– year: 0
  ident: ref28
– ident: ref13
  doi: 10.1109/16.556149
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Title A Simple Model Describing the Symmetric $I\hbox{--}V$ Characteristics of $\hbox{p}$ Polycrystalline Si/ $\hbox{n}$ Monocrystalline Si, and $\hbox{n}$ Polycrystalline Si/ $\hbox{p}$ Monocrystalline Si Junctions
Volume 4
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