Analysis of the Switching Mechanism of Hafnium Oxide Layer with Nanoporous Structure by RF Sputtering

• Published in: Journal of semiconductor technology and science Vol. 25; no. 1; pp. 9 - 13
• Main Authors: Lim, Jongho, Baek, Myung-Hyun, Kwon, Min-Woo
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.02.2025
• Subjects: 전기공학

As the demand for advanced memory technologies grows, the development of next-generation memory devices is required. One promising candidate is resistive random access memory (RRAM), which is advantageous for high-density integration in three-dimensional vertical crossbar array architectures due to...