Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

• Published in: Journal of electronic materials Vol. 52; no. 5; pp. 3068 - 3082
• Main Authors: Feng, Hai-Di, Peng, Shuo, Zhao, Zong-Yan, Wang, Chuan-Jun, Wen, Ming
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2023; Springer Nature B.V
• Subjects: Antimony; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal structure; Electrical properties; Electrical resistivity; Electronics and Microelectronics; Instrumentation; Materials Science; Noble metals; Optical and Electronic Materials; Original Research Article; Phase change materials; Power consumption; Random access memory; Solid solutions; Solid State Physics; Structural stability; Tellurium; SbTe-based alloy; Phase-change memory materials; high-throughput computing; noble metal

Recently, chalcogenide phase-change materials have been widely applied in phase-change random access memory. However, the materials still have shortcomings of poor stability and low crystalline resistivity, causing high-power consumption, resistance drift, and short device life in phase-change rando...