Effect of HCl cleaning on InSb–Al 2 O 3 MOS capacitors

• Published in: Semiconductor science and technology Vol. 34; no. 3; p. 35032
• Main Authors: Vavasour, Oliver J, Jefferies, Richard, Walker, Marc, Roberts, Joseph W, Meakin, Naomi R, Gammon, Peter M, Chalker, Paul R, Ashley, Tim
• Format: Journal Article
• Language: English
• Published: 01.03.2019

Abstract In this work, the role of HCl treatments on InSb surfaces and InSb–Al 2 O 3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl 3 which is not present for simi...