Low-temperature operation of SiGe p-n-p HBTs
Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the...
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Published in | IEEE transactions on electron devices Vol. 39; no. 11; pp. 2638 - 2639 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.11.1992
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Subjects | |
Online Access | Get full text |
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Summary: | Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the performance degradation associated with the large valence-band discontinuity in the base-collector junction (valence-band barrier effects). A peak cutoff frequency of 61 GHz for V/sub bc/=2 V was obtained at 85 K compared to 59 GHz at 298 K.< > |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.163486 |