Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation
A novel Single Event Upset (SEU) tolerant flip-flop design is proposed, which is well suited for very-low power electronics that operate in subthreshold ( < Vt ≈ 500 mV). The proposed flip-flop along with a traditional (unprotected) flip-flop, a Sense-Amplifier-based Rad-hard Flip-Flop (RSAFF) an...
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Published in | Journal of low power electronics and applications Vol. 2; no. 2; pp. 168 - 179 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Basel
MDPI AG
01.06.2012
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Online Access | Get full text |
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