Heavy Ion Characterization of a Radiation Hardened Flip-Flop Optimized for Subthreshold Operation

A novel Single Event Upset (SEU) tolerant flip-flop design is proposed, which is well suited for very-low power electronics that operate in subthreshold ( < Vt ≈ 500 mV). The proposed flip-flop along with a traditional (unprotected) flip-flop, a Sense-Amplifier-based Rad-hard Flip-Flop (RSAFF) an...

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Bibliographic Details
Published inJournal of low power electronics and applications Vol. 2; no. 2; pp. 168 - 179
Main Authors Chavan, Ameet, Palakurthi, Praveen, MacDonald, Eric, Neff, Joseph, Bozeman, Eric
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.06.2012
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