A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN

• Published in: Radio physics and radio astronomy (Print) Vol. 29; no. 4; pp. 317 - 326
• Main Authors: Zozulia, V., Botsula, O., Prykhodko, K.
• Format: Journal Article
• Language: English
• Published: National Academy of Sciences of Ukraine, Institute of Radio Astronomy 01.12.2024
• Subjects: active side boundary (asb); graded layer; impact ionization; intervalley transfer of electrons; millimeter wave; mole fraction; oscillation efficiency; output power

Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a sem...