Performance Evaluation of III-Nitride Avalanche Photodiodes Grown on SiC and GaN Substrates

We will evaluate device performance of state-of-the-art III-N avalanche photodiodes (APD) that were grown on either silicon carbide (SiC) or free-standing gallium nitride (GaN) substrates. Through improved device epitaxial growth techniques, and optimized fabrication processing and design, we demons...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 11; no. 5; pp. 91 - 96
Main Authors Shen, Shyh-Chiang, Zhang, Yun, Yoo, Dongwon, Limb, Jae-Boum, Ryou, Jae-Hyun, Dupuis, Russell D., Britt, Matthew, Yoder, Paul D.
Format Journal Article
LanguageEnglish
Published 28.09.2007
Online AccessGet full text

Cover

More Information
Summary:We will evaluate device performance of state-of-the-art III-N avalanche photodiodes (APD) that were grown on either silicon carbide (SiC) or free-standing gallium nitride (GaN) substrates. Through improved device epitaxial growth techniques, and optimized fabrication processing and design, we demonstrated high-performance III-N PIN APD with a linear avalanching gain of greater than 3E4 for both 280 nm and 340 nm deep ultraviolet optical wavelength applications.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2783861