Surface Activation Using Remote Plasma for a New Wafer Bonding Route to Strained-Si

A pre-bonding remote plasma treatment is being used here to enable differential thermal (dT) bonding and heterogeneous wafer bonding of Si to Si and quartz at room temperature and at elevated temperature. The results presented here are part of an ongoing research, which if successful will yield Ge f...

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Bibliographic Details
Published inECS transactions Vol. 2; no. 4; pp. 23 - 29
Main Authors Sood, Sumant, Belford, Rona
Format Journal Article
LanguageEnglish
Published 28.04.2006
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Summary:A pre-bonding remote plasma treatment is being used here to enable differential thermal (dT) bonding and heterogeneous wafer bonding of Si to Si and quartz at room temperature and at elevated temperature. The results presented here are part of an ongoing research, which if successful will yield Ge free strained-Si substrates. Various pre-bonding plasma treatments of wafers prior to room temperature and elevated temperature silicon on quartz (SOQ) and silicon on insulator (SOI) bonding are presented. Comparison of standard RCA surface activation versus remote plasma surface activation has been reported. Attention is focused on the results obtained by varying different plasma parameters - time, gas species, flow rate etc and their effect on the surface energy of the bonded pair. Defects introduced during bonding and annealing were detected using an in-situ IR camera and capture system and surface micro roughness measurements were made using AFM.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2204814