Fabrication of arrays of (100) Cu under-bump-metallization for 3D IC packaging

• Published in: 2015 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC) pp. 518 - 522
• Main Authors: Chiu, Wei-Lan, Lu, Chia-Ling, Lin, Han-Wen, Liu, Chien-Min, Huang, Yi-Sa, Lu, Tien-Lin, Liu, Tao-Chi, Hsiao, Hsiang-Yao, Chen, Chih, Kuo, Jui-Chao, Tu, King-Ning
• Format: Conference Proceeding
• Language: English
• Published: The Japan Institute of Electronics Packaging 01.04.2015
• Subjects: abnormal grain growth; Annealing; Copper; Grain size; nanotwinned copper; oriented Cu; Strain; X-ray diffraction

Due to the thousands of microbumps on a chip for 3D ICs, the precise control of the microstructure of all the material is required. The nearly -oriented nanotwinned and fine-grained Cu was electroplated on a Si wafer surface and annealed at 400-500 °C for 1 h, many extremely large -oriented Cu cryst...