Bandgap modulation and electrical characteristics of (AlxGa1−x)2O3/4H-SiC thin film heterostructures
•(AlxGa1−x)2O3 films were deposited on 4H-SiC substrates through RF sputtering.•The annealing temperature of 800 °C formed the crystalline structure Ga2O3.•Bandgap widening of (AlxGa1−x)2O3 was achieved through RF sputtering.•The highest charge carrier mobility and concentration were obtained with 0...
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| Published in | Thin solid films Vol. 754; p. 139276 |
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| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier B.V
31.07.2022
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| Abstract | •(AlxGa1−x)2O3 films were deposited on 4H-SiC substrates through RF sputtering.•The annealing temperature of 800 °C formed the crystalline structure Ga2O3.•Bandgap widening of (AlxGa1−x)2O3 was achieved through RF sputtering.•The highest charge carrier mobility and concentration were obtained with 0.4 al.•The resulting device has improved or maintained electrical characteristics.
In this work, (AlxGa1−x)2O3 thin films were grown on a 4H-SiC substrate by radio frequency (RF) sputtering. (AlxGa1−x)2O3 targets with different nominal Al content xt: 0, 0.1, 0.4, 0.8, and 1 were used for RF sputtering. Samples were subsequently annealed at 800 °C to enhance film crystallinity. X-ray diffraction analysis revealed the improved crystallinity for increased Al content (xt), ranging from a ratio of 0 to 0.4 (in relation to Al+Ga content). The films with Al content of 0.8 and 1 exhibited poor crystallinity. The chemical compositions of the Al, Ga, and O atoms were consistent with those of the sputtering targets. Furthermore, the analysis of the inelastic energy loss from X-ray photoelectron spectroscopy confirmed that bandgap tuning is possible for (AlxGa1−x)2O3 using the RF sputtering method. Hall mobility improved up to 17.1%, from 21.90 (xt: 0) to 25.65 (xt: 0.4) cm2V−1s−1. I−V characteristics corresponded well with the Hall measurement. Therefore this study effectively demonstrated the tuning of the bandgap of (AlxGa1−x)2O3 by varying the Al composition. Further, the electrical properties of the (AlxGa1−x)2O3 can be improved or maintained from that of conventional Ga2O3 devices by optimizing the growth ambient. |
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| AbstractList | •(AlxGa1−x)2O3 films were deposited on 4H-SiC substrates through RF sputtering.•The annealing temperature of 800 °C formed the crystalline structure Ga2O3.•Bandgap widening of (AlxGa1−x)2O3 was achieved through RF sputtering.•The highest charge carrier mobility and concentration were obtained with 0.4 al.•The resulting device has improved or maintained electrical characteristics.
In this work, (AlxGa1−x)2O3 thin films were grown on a 4H-SiC substrate by radio frequency (RF) sputtering. (AlxGa1−x)2O3 targets with different nominal Al content xt: 0, 0.1, 0.4, 0.8, and 1 were used for RF sputtering. Samples were subsequently annealed at 800 °C to enhance film crystallinity. X-ray diffraction analysis revealed the improved crystallinity for increased Al content (xt), ranging from a ratio of 0 to 0.4 (in relation to Al+Ga content). The films with Al content of 0.8 and 1 exhibited poor crystallinity. The chemical compositions of the Al, Ga, and O atoms were consistent with those of the sputtering targets. Furthermore, the analysis of the inelastic energy loss from X-ray photoelectron spectroscopy confirmed that bandgap tuning is possible for (AlxGa1−x)2O3 using the RF sputtering method. Hall mobility improved up to 17.1%, from 21.90 (xt: 0) to 25.65 (xt: 0.4) cm2V−1s−1. I−V characteristics corresponded well with the Hall measurement. Therefore this study effectively demonstrated the tuning of the bandgap of (AlxGa1−x)2O3 by varying the Al composition. Further, the electrical properties of the (AlxGa1−x)2O3 can be improved or maintained from that of conventional Ga2O3 devices by optimizing the growth ambient. |
| ArticleNumber | 139276 |
| Author | Park, JoonHui Lee, Hee-Jae Lee, Geon-Hee Byun, Dong-Wook Lee, Hyung-Jin Koo, Sang-Mo Kim, Min-Yeong Shin, Myeong-Cheol Moon, Soo-Young Jung, Seung-Woo Rim, Youseung Schweitz, Michael A. |
| Author_xml | – sequence: 1 givenname: Hee-Jae surname: Lee fullname: Lee, Hee-Jae organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 2 givenname: Myeong-Cheol surname: Shin fullname: Shin, Myeong-Cheol organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 3 givenname: Soo-Young surname: Moon fullname: Moon, Soo-Young organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 4 givenname: Dong-Wook surname: Byun fullname: Byun, Dong-Wook organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 5 givenname: Min-Yeong surname: Kim fullname: Kim, Min-Yeong organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 6 givenname: Hyung-Jin surname: Lee fullname: Lee, Hyung-Jin organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 7 givenname: Geon-Hee surname: Lee fullname: Lee, Geon-Hee organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 8 givenname: Seung-Woo surname: Jung fullname: Jung, Seung-Woo organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 9 givenname: Michael A. orcidid: 0000-0001-8273-8225 surname: Schweitz fullname: Schweitz, Michael A. organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea – sequence: 10 givenname: JoonHui surname: Park fullname: Park, JoonHui organization: Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, South Korea – sequence: 11 givenname: Youseung surname: Rim fullname: Rim, Youseung organization: Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, South Korea – sequence: 12 givenname: Sang-Mo surname: Koo fullname: Koo, Sang-Mo email: smkoo@kw.ac.kr organization: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea |
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| Keywords | Heterostructure Aluminum gallium oxide Bandgap engineering Wide bandgap Gallium oxide |
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| Title | Bandgap modulation and electrical characteristics of (AlxGa1−x)2O3/4H-SiC thin film heterostructures |
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