Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs

This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity at LET of 85Mev/(mg/cm2) as well as immunity to displacement damage and Low dose (ELDRs) testing.

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Bibliographic Details
Published in2014 IEEE Radiation Effects Data Workshop (REDW) pp. 1 - 7
Main Authors Lidow, A., Nakata, A., Rearwin, M., Strydom, J., Zafrani, A. M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2014
Subjects
Field effect transistors
Gallium nitride
Logic gates
Neutrons
Power conversion
Silicon
Testing
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Summary:This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity at LET of 85Mev/(mg/cm2) as well as immunity to displacement damage and Low dose (ELDRs) testing.
ISBN:1479958832
9781479958832
ISSN:2154-0519
2154-0535
DOI:10.1109/REDW.2014.7004594