A 1.8e ^} Temporal Noise Over 110-dB-Dynamic Range 3.4 \mu \text Pixel Pitch Global-Shutter CMOS Image Sensor With Dual-Gain Amplifiers SS-ADC, Light Guide Structure, and Multiple-Accumulation Shutter

• Published in: IEEE journal of solid-state circuits Vol. 53; no. 1; pp. 219 - 228
• Main Authors: Kobayashi, Masahiro, Onuki, Yusuke, Kawabata, Kazunari, Sekine, Hiroshi, Tsuboi, Toshiki, Muto, Takashi, Akiyama, Takeshi, Matsuno, Yasushi, Takahashi, Hidekazu, Koizumi, Toru, Sakurai, Katsuhito, Yuzurihara, Hiroshi, Inoue, Shunsuke, Ichikawa, Takeshi
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Accumulation; Adaptive signal detection; Amplification; Amplifiers; Analog to digital converters; Apertures; CMOS; CMOS image sensors; CMOS integrated circuits; Digital cameras; Digital imaging; Dynamic range; Gain; image enhancement; image quality; image restoration; Image sensors; Linearity; linearization techniques; Low noise; Micromechanical devices; Noise; Noise levels; Noise sensitivity; optical design; Pixels; Program processors; Saturation; Sensitivity; Sensors; Shape memory; Timing
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2017.2737143

A 1.8e rms - temporal noise over 110 dB dynamic range 3.4 μm pixel pitch global shutter (GS) CMOS image sensor (C'S) single-slope analog digital converters (ADCs) with dual-gain amplifier (SSDG-ADC), light guide (LG) structure, and multiple-accumulation shutter has been developed for various accuracy required applications. The newly developed C'S pixel achieves low noise, high saturation, high sensitivity, and high frame rate with seamless GS function. Low noise, high saturation, and high frame rate are realized by small photodiode, large charge-domain memory, and seamless multiple-accumulation readout procedure with SSDG-ADC. Furthermore, high sensitivity is realized by the optimized shape LG structure. The GS C'S is fabricated in a 130 nm 1Poly-Si 4Metal with light shield CMOS process. This image sensor achieves 1.8e rms - temporal noise, 16 200e full-well capacity with 60 fps multiple-accumulation and 28 000e /lx·s sensitivity. This image sensor also realizes highdynamic range readout procedure and in-pixel coded exposure for deblurred images. We also describe the examination results about the relationship of the sensitivity, parasitic light sensitivity, and LG structure.