A Compact Rectifier With Wide Output Load Range Based on High-Voltage-Gain Impedance Matching Network

• Published in: IEEE microwave and wireless technology letters (Print) pp. 1 - 4
• Main Authors: Long, Hao Xuan, Liu, Jian
• Format: Journal Article
• Language: English
• Published: IEEE 2025
• Subjects: Electric potential; High-voltage techniques; High-voltage-gain impedance matching network (HVGMN); Impedance; Impedance matching; Inductors; Pins; Power measurement; Radio frequency; rectifier; Rectifiers; voltage doubler (VB); wide output load range; Wireless communication
• DOI: 10.1109/LMWT.2025.3583690
• ISSN: 2771-957X

This letter proposes a compact radio frequency (RF) rectifier with a wide output load range based on a high-voltage-gain impedance matching network (HVGMN). The HVGMN consists of an inductor, a short stub, and a <inline-formula> <tex-math notation="LaTeX">50~\Omega </tex-math> </inline-formula> transmission line. Here, the inductor is utilized to provide a high-voltage-gain for the rectifying diodes. Besides, a short stub and a <inline-formula> <tex-math notation="LaTeX">50~\Omega </tex-math> </inline-formula> transmission line are employed to realize impedance matching between the diode and the RF signal source. The detailed theoretical analysis of the HVGMN is developed. The proposed rectifier operates at 0.915 GHz. The measurement results show that the rectifier achieves a 71.1% peak RF-to-dc power conversion efficiency (PCE) with a 4 dBm input power level and a 23 k<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math> </inline-formula> output load. Furthermore, its PCE is higher than 50% when the load varies in the range of 9.5 and 70 k<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math> </inline-formula> at 0 dBm.