High-sensitivity magnetoresistive sensor with optimized orthogonal exchange bias for low-field measurement

• Published in: IEEE transactions on magnetics p. 1
• Main Authors: Yang, Yi, Lamichhane, Suvechhya, Chen, Chun-Yen, Sokolov, Andrei, Yin, Xiaolu, Liu, Yen-Fu, Hong, Jhen-Yong, Chang, Liang-Juan, Liou, Sy-Hwang
• Format: Journal Article
• Language: English
• Published: IEEE 2025
• Subjects: Annealing; High-sensitivity magnetoresistive sensor; Magnetic field measurement; Magnetic fields; Magnetic flux; magnetic flux guiding structure; Magnetic hysteresis; magnetic tunnel junction; Magnetic tunneling; orthogonal exchange bias; Sensitivity; Temperature measurement; Temperature sensors; Voltage measurement

An MTJ-based magnetoresistive sensor that combines optimized orthogonal exchange bias with a previously proposed magnetic flux guiding structure is studied for improved overall performance. Due to the orthogonal exchange bias, the magnetoresistive sensor exhibits reduced hysteresis, which results in...