Interfacial Reaction and Diffusion at the One-Dimensional Interface of Two-Dimensional PtSe 2

Two-dimensional (2D) PtSe has potential applications in near-infrared optoelectronics because its band gap can be tuned by varying the layer thickness. There are several different platinum-selenide phases with different stoichiometries that result from high-temperature processing. In this report, we...

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Bibliographic Details
Published inNano letters Vol. 22; no. 12; pp. 4733 - 4740
Main Authors Kumar, Pawan, Meng, Andrew C, Jo, Kiyoung, Stach, Eric A, Jariwala, Deep
Format Journal Article
LanguageEnglish
Published United States 22.06.2022
Subjects
Phase transformation
Two-dimensional PtSe2
Se-vacancy
In situ TEM
4D STEM
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Summary:Two-dimensional (2D) PtSe has potential applications in near-infrared optoelectronics because its band gap can be tuned by varying the layer thickness. There are several different platinum-selenide phases with different stoichiometries that result from high-temperature processing. In this report, we use scanning/transmission electron microscopy (STEM) to investigate high-temperature phase transitions in 2D PtSe and observe interfacial reactions as well as the Kirkendall effect. The 2D nature of PtSe plays a key role in the unique one-dimensional interfaces that result during the formation of Se-poor phases (PtSe and PtSe ) at the edges of the PtSe crystals. The activation energy extracted for this formation suggests that the process is mediated by Se vacancies, as evidenced by the large strain variations in the material made via 4D STEM measurements. The observation of the Kirkendall effect in a 2D material suggests routes to engineer 1D edge chemistry for contact engineering in device applications.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.2c00874