InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO_2 patterned GaN film - Sheu, Jinn-Kong; Chang, Kuo-Hua; Tu, Shang-Ju; Lee, Ming-Lun; Yang, Chih-Ciao; Hsu, Che-Kang; Lai, Wei-Chih (Optics express, 2010)