Comments on the electronic transport mechanisms in the crystalline state of Ge—Sb—Te phase-change materials

• Published in: Physics of complex systems Vol. 2; no. 2; pp. 74 - 80
• Main Authors: Shimakawa, Koichi, Jeronimo Freitas, Ruben
• Format: Journal Article
• Language: English
• Published: Herzen State Pedagogical University of Russia 01.06.2021
• Subjects: crystalline phase; degenerate semiconductor; electronic transport; Ge—Sb—Te phase-change materials; grain boundary; metal-insulator transition

It is known that phase-change materials, such as Ge–Sb—Te ternary system, are promising resistive non-volatile random-access memory applications with ultra-rapid reversible transformations between the crystalline and amorphous phases. This class of electronic transition is categorized to be the meta...