Application of the R-matrix method in quantum transport simulations Tight-binding model

• Published in: Journal of computational electronics Vol. 9; no. 3-4; pp. 256 - 261
• Main Authors: Mil’nikov, Gennady, Mori, Nobuya, Kamakura, Yoshinari
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.12.2010; Springer
• Subjects: Applied sciences; Compound structure devices; Cross-disciplinary physics: materials science; rheology; Electrical Engineering; Electronics; Engineering; Exact sciences and technology; Materials science; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mechanical Engineering; Nanoscale materials and structures: fabrication and characterization; Optical and Electronic Materials; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Theoretical; R-matrix; Non-equilibrium Green’s function; Metal–insulator–semiconductor structures; Electron transport theory; Performance evaluation; Vacancy; Metal-insulator-semiconductor structures; Mass storage; Roughness; MIS structure; Atomic cluster; Ballistic transport; Green function; Fragmentation; Tight binding approximation; Non equilibrium conditions; p type semiconductor; Non-equilibrium Green's function; Matrix method; Silicon; Nanowires; Transport theory; Hamiltonian; Quantum transport

The R-matrix method based on a continuous model is generalized as to become applicable to the atomistic transport simulations with a tight-binding device Hamiltonian. The device elements are introduced as arbitrary atomic clusters in the device area and freedom in the device fragmentation can be use...