The Merged Voltage Follower: A Class-AB CMOS Follower With Enhanced Bandwidth to Drive Loads With Low Resistance and Large Capacitance Le suiveur de tension fusionné: un suiveur CMOS de classe AB avec une bande passante améliorée pour piloter des charges avec une faible résistance et une grande capacité
In this article, a new CMOS voltage follower, with class AB output, derived by merging the super follower and the flipped voltage follower, is introduced. The resulting cell exhibits lower output impedance than its predecessors. Expressions for the behavior of the proposed follower are derived and v...
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Published in | Canadian journal of electrical and computer engineering Vol. 44; no. 1; pp. 30 - 40 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
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IEEE
2021
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Abstract | In this article, a new CMOS voltage follower, with class AB output, derived by merging the super follower and the flipped voltage follower, is introduced. The resulting cell exhibits lower output impedance than its predecessors. Expressions for the behavior of the proposed follower are derived and verified by circuit simulations in Eldo using the C5N CMOS process models available through The MOSIS Service. The conducted analysis shows an improved performance of the presented circuit with respect to the flipped- and super followers. To prove the principle, a test cell was fabricated in the mentioned technology and characterized. Measurement results show quasi-symmetric rising and falling edges and a gain-bandwidth product of 32 MHz with a load capacitance of 47 pF. The power consumption of the cell is <inline-formula> <tex-math notation="LaTeX">138~\mu \text{W} </tex-math></inline-formula> with 2-V supply. Résumé -Dans cet article, un nouveau suiveur de tension CMOS, avec une sortie de classe AB, dérivé de la fusion du super suiveur et du suiveur de tension inversé, est présenté. La cellule résultante présente une impédance de sortie inférieure à celle de ses prédécesseurs. Les expressions pour le comportement du suiveur proposé sont dérivées et vérifiées par des simulations de circuits dans Eldo en utilisant les modèles de processus CMOS C5N disponibles via le service MOSIS. L'analyse effectuée montre une amélioration des performances du circuit présenté par rapport aux suiveurs super et inversé. Pour prouver le principe, une cellule d'essai a été fabriquée dans la technologie mentionnée et caractérisée. Les résultats de mesure montrent des fronts montants et descendants quasi-symétriques et un produit gain-largeur de bande de 32 MHz avec une capacité de charge de 47 pF. La consommation en puissance electrique de la cellule est de 138 <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula> W avec une alimentation 2 V. |
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AbstractList | In this article, a new CMOS voltage follower, with class AB output, derived by merging the super follower and the flipped voltage follower, is introduced. The resulting cell exhibits lower output impedance than its predecessors. Expressions for the behavior of the proposed follower are derived and verified by circuit simulations in Eldo using the C5N CMOS process models available through The MOSIS Service. The conducted analysis shows an improved performance of the presented circuit with respect to the flipped- and super followers. To prove the principle, a test cell was fabricated in the mentioned technology and characterized. Measurement results show quasi-symmetric rising and falling edges and a gain-bandwidth product of 32 MHz with a load capacitance of 47 pF. The power consumption of the cell is <inline-formula> <tex-math notation="LaTeX">138~\mu \text{W} </tex-math></inline-formula> with 2-V supply. Résumé -Dans cet article, un nouveau suiveur de tension CMOS, avec une sortie de classe AB, dérivé de la fusion du super suiveur et du suiveur de tension inversé, est présenté. La cellule résultante présente une impédance de sortie inférieure à celle de ses prédécesseurs. Les expressions pour le comportement du suiveur proposé sont dérivées et vérifiées par des simulations de circuits dans Eldo en utilisant les modèles de processus CMOS C5N disponibles via le service MOSIS. L'analyse effectuée montre une amélioration des performances du circuit présenté par rapport aux suiveurs super et inversé. Pour prouver le principe, une cellule d'essai a été fabriquée dans la technologie mentionnée et caractérisée. Les résultats de mesure montrent des fronts montants et descendants quasi-symétriques et un produit gain-largeur de bande de 32 MHz avec une capacité de charge de 47 pF. La consommation en puissance electrique de la cellule est de 138 <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula> W avec une alimentation 2 V. |
Author | Molinar-Solis, Jesus Ezequiel Ramirez-Salinas, Marco A. Ponce-Ponce, Victor Hugo Oliva-Moreno, Noe Ocampo-Hidalgo, Juan Jesus |
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SubjectTerms | Bandwidth Capacitance Class-AB amplifiers CMOS analog integrated circuits Integrated circuit modeling Power demand Resistance Semiconductor device modeling Transistors voltage followers |
Title | The Merged Voltage Follower: A Class-AB CMOS Follower With Enhanced Bandwidth to Drive Loads With Low Resistance and Large Capacitance Le suiveur de tension fusionné: un suiveur CMOS de classe AB avec une bande passante améliorée pour piloter des charges avec une faible résistance et une grande capacité |
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