Interfacial Polarization and Its Mechanism of Nanostructured Amorphous Silicon Nitride

Nanostructured amorphous silicon nitride （NASN） was obtained by compacting the particles of the order of nanometer. The volume of interfaces occupies a large fraction of the total volume. This type of solid possesses some novel physical properties. The conventional Si3N4 is a kind of excellent insul...

Full description

Saved in:
Bibliographic Details
Published in中国科学通报：英文版 no. 18; pp. 1511 - 1515
Main Author 王涛 张立德
Format Journal Article
LanguageEnglish
Published 01.09.1994
Subjects
amorphous
constant
dielectric
nanostructured
nitride
polarization
silicon
space-charge
Online AccessGet full text
ISSN1001-6538
1861-9541

Cover

Abstract Nanostructured amorphous silicon nitride （NASN） was obtained by compacting the particles of the order of nanometer. The volume of interfaces occupies a large fraction of the total volume. This type of solid possesses some novel physical properties. The conventional Si3N4 is a kind of excellent insulator, and thus it is very
AbstractList Nanostructured amorphous silicon nitride （NASN） was obtained by compacting the particles of the order of nanometer. The volume of interfaces occupies a large fraction of the total volume. This type of solid possesses some novel physical properties. The conventional Si3N4 is a kind of excellent insulator, and thus it is very
Author 王涛 张立德
AuthorAffiliation Institute of Solid State Physics Academia Sinica Hefei 230031 PRC PRC
Author_xml – sequence: 1
  fullname: 王涛 张立德
BookMark eNotT8lqwzAUFCWFJmn_QdCzwcqzLPsYQhdDmha6XMOzlljFllJJPrRfX0F7moWZgVmRhfNOX5Ala2pWtLxii8zLkhU1h-aKrGL8zAqY2CzJR-eSDgalxZG--BGD_cFkvaPoFO1SpE9aDuhsnKg39IDOxxRmmeagFd1OPpwHP0f6akcrc-tgU7BKX5NLg2PUN_-4Ju_3d2-7x2L__NDttvtCMgap4Cg06rpXCCiANUoY0FXVcihRMmih1KbmhkHf9ljxHDJatEZtagPQZ2NNbv925eDd6cu60_Ec7ITh-5gf85KJijfwC6esUJg
ContentType Journal Article
DBID 2RA
92L
CQIGP
~WA
DatabaseName 维普_期刊
中文科技期刊数据库-CALIS站点
维普中文期刊数据库
中文科技期刊数据库- 镜像站点
DatabaseTitleList
DeliveryMethod fulltext_linktorsrc
Discipline Sciences (General)
DocumentTitleAlternate Interfacial Polarization and Its Mechanism of Nanostructured Amorphous Silicon Nitride
EISSN 1861-9541
EndPage 1515
ExternalDocumentID 1005017458
GroupedDBID -Y2
-~X
.86
0R~
1N0
29B
2B.
2C.
2RA
2VQ
4.4
40D
40G
5GY
67Z
6J9
6NX
8UJ
92E
92I
92L
92Q
93N
AARTL
ABJOX
ABMNI
ABTMW
ACCUX
ACGFO
ACGFS
ACOMO
ADHIR
AEGNC
AEOHA
AFGCZ
AGQMX
ALMA_UNASSIGNED_HOLDINGS
AMKLP
BA0
BGNMA
CAG
COF
CQIGP
CS3
CW9
DU5
EBS
EJD
ESBYG
F5P
GX1
HF~
HZ~
IHE
I~X
I~Z
KOV
KQ8
M4Y
M~E
NB0
NU0
O9-
OK1
RNS
RPX
RSV
S1Z
S27
SCL
SDH
SHS
SOJ
T13
TCJ
TN5
U2A
UG4
W48
WK8
~02
~WA
ID FETCH-LOGICAL-c113t-5a7eae6bda3a7318d7f3e449530ac13930ef65f13b9ba453a7fe79fd26f33b453
ISSN 1001-6538
IngestDate Wed Feb 14 10:18:35 EST 2024
IsPeerReviewed false
IsScholarly false
Issue 18
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c113t-5a7eae6bda3a7318d7f3e449530ac13930ef65f13b9ba453a7fe79fd26f33b453
Notes 11-1785/N
WANG Tao and ZHANG Li-De(Institute of Solid State Physics, Academia Sinica, Hefei 230031, PRC)
PageCount 5
ParticipantIDs chongqing_primary_1005017458
PublicationCentury 1900
PublicationDate 1994-09-01
PublicationDateYYYYMMDD 1994-09-01
PublicationDate_xml – month: 09
  year: 1994
  text: 1994-09-01
  day: 01
PublicationDecade 1990
PublicationTitle 中国科学通报：英文版
PublicationTitleAlternate Chinese Science Bulletin
PublicationYear 1994
SSID ssj0013172
Score 1.2375467
Snippet Nanostructured amorphous silicon nitride （NASN） was obtained by compacting the particles of the order of nanometer. The volume of interfaces occupies a large...
SourceID chongqing
SourceType Publisher
StartPage 1511
SubjectTerms amorphous
constant
dielectric
nanostructured
nitride
polarization
silicon
space-charge
Title Interfacial Polarization and Its Mechanism of Nanostructured Amorphous Silicon Nitride
URI http://lib.cqvip.com/qk/86894X/199418/1005017458.html
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3da9UwFA9uT76I8wM_puTBgDI6btp8NI_p7BjCRHCT-zaSNtXBbNXVF_96z0lq24GI-lLKyUl6b35pcnL6OyeEvOBO56ot8gxewjYTOm8zkzufKdlJ2QTnQsAA59O36uRcvNnK7XLaZowuGf1h8-O3cSX_gyrIAFeMkv0HZOdGQQD3gC9cAWG4_hXG0Z3Xuej1fod71CmoMpF8x-uD04CBvXgOBjoGXD-kdLHfkXRuPw_Qx8iAfX95BeOhh1Exfrtsb3CDWC1YVTL7mtWSmYpVcKOZ1cxwlIDcKlabyJewrFastMxKVh-z6ihKSlZCLY5FBko1Vi9Bf2bQRkGNWqBSgVZ1gC1DdbuJz6piGUhqVunFSZGyDZtfToo0ryJzS8mUyOUwJFmpeGak4OthVq4mUzBG-GphRtNrWbVmLiHHFDawr5LlDtkpeAz43vLlSxLX6Yv39AMwh8anof_4FSyDlSVxdpfcmbYA1CY898it0N8je9Mke01fTpnAX90nH1YA0zXAFACmADCdAaZDR28CTGeA6QQwnQB-QM6P67Ojk2w6CCNrOC_GTDodXFC-dYXTMAm3uiuCQGbwxjVgwheb0MHLxQtvvBMSlLqgTdfmqisKD4KHZLcf-vCIUKEc7JB504XQiGAkrDHCN9Coazet981jsj93z8WXlPDkYuniJ38ufkpuc4N8YZ7lcp_swl8Oz8BoG_3ziMpPHco3Fg
linkProvider Geneva Foundation for Medical Education and Research
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Interfacial+Polarization+and+Its+Mechanism+of+Nanostructured+Amorphous+Silicon+Nitride&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%A7%91%E5%AD%A6%E9%80%9A%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E7%8E%8B%E6%B6%9B+%E5%BC%A0%E7%AB%8B%E5%BE%B7&rft.date=1994-09-01&rft.issn=1001-6538&rft.eissn=1861-9541&rft.issue=18&rft.spage=1511&rft.epage=1515&rft.externalDocID=1005017458
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F86894X%2F86894X.jpg