Generation-recombination noise and other features of doped silicon in a wide temperature range

The characteristics of the generation-recombination (g-r) process in silicon are investigated in a temperature range from 25 to 360 K. In the case of shallow donors, it is shown that the free electron density strongly depends on temperature: only 20% of donors are ionized at shallow donor densities...

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Bibliographic Details
Published inLithuanian journal of physics Vol. 62; no. 3
Main Authors Palenskis, Vilius, Glemža, Justinas, Matukas, Jonas
Format Journal Article
LanguageEnglish
Published 25.10.2022
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