Enhanced charge carrier injection in heterojunction organic field-effect transistor by inserting an MoO3 buffer layer

A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of...

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Bibliographic Details
Published in中国物理B：英文版 Vol. 21; no. 11; pp. 416 - 420
Main Author 于欣格 于军胜 黄伟 曾红娟
Format Journal Article
LanguageEnglish
Published 01.11.2012
Subjects
三氧化钼
场效应迁移率
异质结
有机场效应晶体管
有机界面
电荷
缓冲层
载流子注入
金属
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/21/11/117307

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Summary:A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
Bibliography:A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
Yu Xin-Ge, Yu Jun-Sheng , Huang Wei and Zeng Hong-Juan State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information University of Electronic Science and Technology of China, Chengdu 610054, China
organic field-effect transistor （OFET）, MoOz buffer layer, heterojunction structure, con-tact resistance
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/21/11/117307