朱俊, 冯. 班. (2014). Binding energies of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions with finitely thick potential barriers. 中国物理B：英文版, 6, 440-445. https://doi.org/10.1088/1674-1056/23/6/066801
Chicago Style (17th ed.) Citation朱俊, 冯振宇 班士良. "Binding Energies of Impurity States in Strained Wurtzite GaN/AlxGa1-xN Heterojunctions with Finitely Thick Potential Barriers." 中国物理B：英文版 6 (2014): 440-445. https://doi.org/10.1088/1674-1056/23/6/066801.
MLA (9th ed.) Citation朱俊, 冯振宇 班士良. "Binding Energies of Impurity States in Strained Wurtzite GaN/AlxGa1-xN Heterojunctions with Finitely Thick Potential Barriers." 中国物理B：英文版, 6, 2014, pp. 440-445, https://doi.org/10.1088/1674-1056/23/6/066801.
Warning: These citations may not always be 100% accurate.