Reaction‐bonded B 4 C/SiC composites synthesized by microwave heating

Abstract The reaction‐bonding technique was used to synthesize boron carbide (B 4 C) ‐ silicon carbide (SiC) composites by microwave heating. Preforms of porous B 4 C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a mi...

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Bibliographic Details
Published inInternational journal of applied ceramic technology Vol. 16; no. 4; pp. 1287 - 1294
Main Authors Dutto, Mathieu, Goeuriot, Dominique, Saunier, Sébastien, Marinel, Sylvain, Frage, Nachum, Hayun, Shmuel
Format Journal Article
LanguageEnglish
Published Wiley 01.07.2019
Subjects
Chemical Sciences
Material chemistry
Reaction bonding
Boron carbide
Microwaves
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Summary:Abstract The reaction‐bonding technique was used to synthesize boron carbide (B 4 C) ‐ silicon carbide (SiC) composites by microwave heating. Preforms of porous B 4 C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400‐1500°C, t : 5‐120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15‐19 GPa) for a much lower density (≈2.5 g/cm 3 for B 4 C‐based material instead of 3.95 g/cm 3 for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.
ISSN:1546-542X
1744-7402
DOI:10.1111/ijac.13211