Numerical Study of Thermal Stresses for the Semiconductor CdZnTe in Vertical Bridgman

The aim of this work is to present a numerical simulation of thermal stress in directional solidification of CdZnTe in vertical Bridgman apparatus. Especial attention will be attributed to show the importance of cooling temperature and time’s growth affecting the thermal stress. Furthermore, we will...

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Bibliographic Details
Published inInternational letters of chemistry, physics and astronomy Vol. 55; pp. 66 - 78
Main Authors Jamai, Hanen, El Ganaoui, M., Sammouda, Habib, Pateyron, Bernard
Format Journal Article
LanguageEnglish
Published 01.07.2015
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Summary:The aim of this work is to present a numerical simulation of thermal stress in directional solidification of CdZnTe in vertical Bridgman apparatus. Especial attention will be attributed to show the importance of cooling temperature and time’s growth affecting the thermal stress. Furthermore, we will focus on investigating the thermal stress’ components and their distribution in crystal, which gives a detailed about the stress distribution and consequently on the distribution of defects during solidification of CdZnTe.
ISSN:2299-3843
2299-3843
DOI:10.18052/www.scipress.com/ILCPA.55.67