InAlN/AlN/GaN MIS-HEMTs With 10.8 \cdot Johnson Figure of Merit

• Published in: IEEE electron device letters Vol. 35; no. 5; pp. 527 - 529
• Main Authors: Downey, Brian P., Meyer, David J., Katzer, D. Scott, Roussos, Jason A., Ming Pan, Xiang Gao
• Format: Journal Article
• Language: English
• Published: IEEE 01.05.2014
• Subjects: Breakdown voltage; Current measurement; Gallium nitride; GaN; HEMTs; high-electron mobility transistors (HEMTs); III-V semiconductor materials; InAlN; Leakage currents; Logic gates; MODFETs; SiNx; high-electron mobility transistors (HEMTs); Breakdown voltage; InAlN; {\rm SiN}_{{\rm x}}; GaN

A high combination of three-terminal breakdown voltage (VBK) and current gain cutoff frequency (f T ) was achieved with SiN x /InAlN/AlN/GaN metal-insulator- semiconductor high-electron mobility transistors (MIS-HEMTs). A 1-nm SiN x gate dielectric was deposited ex situ in a molecular beam epitaxy s...