Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf 0.5 Zr 0.5 O 2 Grown by Atomic Layer Epitaxy

• Published in: Small (Weinheim an der Bergstrasse, Germany) Vol. 21; no. 3; p. e2408278
• Main Authors: Jiang, Yu‐Sen, Lin, Wei‐En, Shiojiri, Makoto, Yin, Yu‐Tung, Su, Yu‐Cheng, Nien, Chih‐Hung, Hsu, Chen‐Feng, Hou, Vincent Duen‐Huei, Chang, Chih‐Sheng, Radu, Iuliana, Chen, Miin‐Jang
• Format: Journal Article
• Language: English
• Published: Germany 01.01.2025
• Subjects: ferroelectric; precession electron diffraction; atomic layer epitaxy; polarization switching dynamics; negative capacitance

Ferroelectric properties of Hf 0.5 Zr 0.5 O 2 are strongly correlated with its crystallographic orientation, with the [001] direction serving as the polar axis. However, the epitaxial growth of highly polar‐axis‐oriented Hf 0.5 Zr 0.5 O 2 layers with pronounced ferroelectricity is rarely reported. H...