APA (7th ed.) Citation

Jiang, Y., Lin, W., Shiojiri, M., Yin, Y., Su, Y., Nien, C., . . . Chen, M. (2025). Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf 0.5 Zr 0.5 O 2 Grown by Atomic Layer Epitaxy. Small (Weinheim an der Bergstrasse, Germany), 21(3), e2408278. https://doi.org/10.1002/smll.202408278

Chicago Style (17th ed.) Citation

Jiang, Yu‐Sen, et al. "Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf 0.5 Zr 0.5 O 2 Grown by Atomic Layer Epitaxy." Small (Weinheim an Der Bergstrasse, Germany) 21, no. 3 (2025): e2408278. https://doi.org/10.1002/smll.202408278.

MLA (9th ed.) Citation

Jiang, Yu‐Sen, et al. "Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf 0.5 Zr 0.5 O 2 Grown by Atomic Layer Epitaxy." Small (Weinheim an Der Bergstrasse, Germany), vol. 21, no. 3, 2025, p. e2408278, https://doi.org/10.1002/smll.202408278.