Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through \hbox Layers Into 4H-SiC

• Published in: IEEE transactions on electron devices Vol. 55; no. 8; pp. 1997 - 2003
• Main Authors: Mochizuki, Kazuhiro, Someya, Tomoyuki, Takahama, Takashi, Onose, Hidekatsu, Yokoyama, Natsuki
• Format: Journal Article
• Language: English
• Published: IEEE 01.08.2008
• Subjects: Aluminum; Analytical models; Doping; ion implantation; Ions; Monte Carlo methods; power semiconductor devices; Silicon; Silicon carbide; silicon compounds; simulation; Surface treatment

This paper presents a detailed analysis and precise modeling of multiple-energy Al implantations necessary for boxlike profiles in the p + -region of 4H-SiC power devices. To demonstrate the balance between "scatter-in channeling" and "amorphization-suppressed channeling," a thin...