P‐97: Improved Electrical Performance and Realiability of a‐IGZO TFT by N2O Plasma Treatment Optimization
This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N2O plasma treatment and proposes a solution according to the presence of N2O plasma in the subsequent postprocess. In mass manufacture of a‐IGZO TFTs, N2O p...
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| Published in | SID International Symposium Digest of technical papers Vol. 55; no. 1; pp. 1762 - 1765 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
Campbell
Wiley Subscription Services, Inc
01.06.2024
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| Online Access | Get full text |
| ISSN | 0097-966X 2168-0159 |
| DOI | 10.1002/sdtp.17914 |
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| Abstract | This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N2O plasma treatment and proposes a solution according to the presence of N2O plasma in the subsequent postprocess. In mass manufacture of a‐IGZO TFTs, N2O plasma is usually completely removed during the subsequent post‐plasma treatment processes. However, we maintained the presence of N2O plasma and analyzed its effect on device performance and reliability. While a‐IGZO TFTs fabricated with N2O plasmaremoved during the post‐process exhibited non‐ideal negative Vth shifts under PBTS, the devices fabricated with N2O plasma present during post‐processing showed superior electrical performance and reliability, avoiding the non‐ideal Vth shift phenomenon. This study shows that maintaining N2O plasma during the post‐process is an effective method for ensuring device reliability as well as improved performance of a‐IGZO TFTs in mass production. |
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| AbstractList | This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N
2
O plasma treatment and proposes a solution according to the presence of N
2
O plasma in the subsequent postprocess. In mass manufacture of a‐IGZO TFTs, N
2
O plasma is usually completely removed during the subsequent post‐plasma treatment processes. However, we maintained the presence of N
2
O plasma and analyzed its effect on device performance and reliability. While a‐IGZO TFTs fabricated with N
2
O plasmaremoved during the post‐process exhibited non‐ideal negative V
th
shifts under PBTS, the devices fabricated with N
2
O plasma present during post‐processing showed superior electrical performance and reliability, avoiding the non‐ideal V
th
shift phenomenon. This study shows that maintaining N
2
O plasma during the post‐process is an effective method for ensuring device reliability as well as improved performance of a‐IGZO TFTs in mass production. This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N2O plasma treatment and proposes a solution according to the presence of N2O plasma in the subsequent postprocess. In mass manufacture of a‐IGZO TFTs, N2O plasma is usually completely removed during the subsequent post‐plasma treatment processes. However, we maintained the presence of N2O plasma and analyzed its effect on device performance and reliability. While a‐IGZO TFTs fabricated with N2O plasmaremoved during the post‐process exhibited non‐ideal negative Vth shifts under PBTS, the devices fabricated with N2O plasma present during post‐processing showed superior electrical performance and reliability, avoiding the non‐ideal Vth shift phenomenon. This study shows that maintaining N2O plasma during the post‐process is an effective method for ensuring device reliability as well as improved performance of a‐IGZO TFTs in mass production. |
| Author | Kim, Hyojung Shim, Seungbo Sung, Hyesun Lee, Dooyoul |
| Author_xml | – sequence: 1 givenname: Hyojung surname: Kim fullname: Kim, Hyojung organization: Technology Quality Reliability, OLED Business Samsung Display Co., Ltd – sequence: 2 givenname: Hyesun surname: Sung fullname: Sung, Hyesun organization: Technology Quality Reliability, OLED Business Samsung Display Co., Ltd – sequence: 3 givenname: Seungbo surname: Shim fullname: Shim, Seungbo organization: Technology Quality Reliability, OLED Business Samsung Display Co., Ltd – sequence: 4 givenname: Dooyoul surname: Lee fullname: Lee, Dooyoul organization: Technology Quality Reliability, OLED Business Samsung Display Co., Ltd |
| BookMark | eNp9kMtKw0AUQAepYFvd-AUD7oTUmcljMu6ktrVQTNAI4iZMM3dgSl5OUiWu_AS_0S8xNa5d3c0593LPBI3KqgSEzimZUULYVaPaeka5oN4RGjMahA6hvhihMSGCOyIInk_QpGl2hLiu54kxKuLvzy_Br_G6qG31BgovcshaazKZ4xisrmwhywywLBV-AJkbuTW5aTtcaSx7d716iXCyTPC2w_cswnEum0LixIJsCyhbHNWtKcyHbE1VnqJjLfMGzv7mFD0tF8n8ztlEq_X8ZuNklPiew7lmVEgBnG6VJoIpyHimAk0C6Qvf1RByraQWLHM9yQIFXPWicsH1mC-UO0UXw97-p9c9NG26q_a27E-mLgl9wWnIWU9dDlRmq6axoNPamkLaLqUkPeRMDznT35w9TAf43eTQ_UOmj7dJPDg_89l7Qg |
| Cites_doi | 10.1088/1468-6996/11/4/044305 10.1038/s41598-021-87950-0 10.1038/s41598-021-01364-6 10.1021/acsami.1c24820 10.1109/TED.2022.3229292 10.1889/JSID19.1.16 10.1049/ell2.12239 10.1016/j.mee.2011.03.069 10.1109/LED.2010.2073439 10.1021/acsnano.2c01286 |
| ContentType | Journal Article |
| Copyright | 2024 The Society for Information Display |
| Copyright_xml | – notice: 2024 The Society for Information Display |
| DBID | AAYXX CITATION 7SC 7SP 8FD JQ2 L7M L~C L~D |
| DOI | 10.1002/sdtp.17914 |
| DatabaseName | CrossRef Computer and Information Systems Abstracts Electronics & Communications Abstracts Technology Research Database ProQuest Computer Science Collection Advanced Technologies Database with Aerospace Computer and Information Systems Abstracts Academic Computer and Information Systems Abstracts Professional |
| DatabaseTitle | CrossRef Technology Research Database Computer and Information Systems Abstracts – Academic Electronics & Communications Abstracts ProQuest Computer Science Collection Computer and Information Systems Abstracts Advanced Technologies Database with Aerospace Computer and Information Systems Abstracts Professional |
| DatabaseTitleList | CrossRef Technology Research Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 2168-0159 |
| EndPage | 1765 |
| ExternalDocumentID | 10_1002_sdtp_17914 SDTP17914 |
| Genre | article |
| GroupedDBID | .4S 05W 0R~ 1OC 31~ 33P 3SF 50Y 52U 8-1 A00 AAESR AAEVG AAHHS AAHQN AAMNL AANHP AANLZ AAONW AASGY AAXRX AAYCA AAZKR ABCUV ABDPE ABJNI ACAHQ ACBWZ ACCFJ ACCZN ACGFS ACPOU ACRPL ACXBN ACXQS ACYXJ ADBBV ADEOM ADIZJ ADMGS ADNMO ADOZA ADXAS AEEZP AEIGN AEIMD AEQDE AEUYR AFBPY AFFNX AFFPM AFGKR AFPWT AFWVQ AFZJQ AHBTC AITYG AIURR AIWBW AJBDE AJXKR ALMA_UNASSIGNED_HOLDINGS ALUQN ALVPJ AMBMR AMYDB ARCSS ASPBG ATUGU AUFTA AVWKF AZFZN AZVAB BDRZF BFHJK BHBCM BMNLL BMXJE BNHUX BOGZA BRXPI DCZOG DPXWK DRFUL DRSTM EBS EJD FEDTE G-S GODZA HGLYW HSZ HVGLF HZ~ LATKE LEEKS LITHE LOXES LUTES LYRES MEWTI MRFUL MRSTM MSFUL MSSTM MXFUL MXSTM MY~ O66 O9- P2W R.K ROL SUPJJ TUS WBKPD WIH WIK WLBEL WOHZO WXSBR WYISQ WYJ ZZTAW AAYXX ADMLS AEYWJ AGHNM AGQPQ AGYGG CITATION 7SC 7SP 8FD AAMMB AEFGJ AGXDD AIDQK AIDYY JQ2 L7M L~C L~D |
| ID | FETCH-LOGICAL-c1054-77f219a9e71bdf092dec7cd6f06a5953fe87fdaf92c34a26de7d105d3e34259d3 |
| ISSN | 0097-966X |
| IngestDate | Fri Jul 25 11:48:42 EDT 2025 Tue Jul 01 02:09:09 EDT 2025 Wed Jan 22 17:17:28 EST 2025 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c1054-77f219a9e71bdf092dec7cd6f06a5953fe87fdaf92c34a26de7d105d3e34259d3 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| PQID | 3085971872 |
| PQPubID | 2034401 |
| PageCount | 4 |
| ParticipantIDs | proquest_journals_3085971872 crossref_primary_10_1002_sdtp_17914 wiley_primary_10_1002_sdtp_17914_SDTP17914 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | June 2024 2024-06-00 20240601 |
| PublicationDateYYYYMMDD | 2024-06-01 |
| PublicationDate_xml | – month: 06 year: 2024 text: June 2024 |
| PublicationDecade | 2020 |
| PublicationPlace | Campbell |
| PublicationPlace_xml | – name: Campbell |
| PublicationTitle | SID International Symposium Digest of technical papers |
| PublicationYear | 2024 |
| Publisher | Wiley Subscription Services, Inc |
| Publisher_xml | – name: Wiley Subscription Services, Inc |
| References | 2010; 11 2021; 57 2022; 14 2011; 88 2010; 31 2021; 11 2022 2011; 19 2022; 16 e_1_2_1_7_1 e_1_2_1_8_1 e_1_2_1_5_1 e_1_2_1_6_1 e_1_2_1_3_1 e_1_2_1_4_1 e_1_2_1_10_1 e_1_2_1_2_1 e_1_2_1_11_1 e_1_2_1_9_1 |
| References_xml | – volume: 11 start-page: 1 issue: 1 year: 2021 end-page: 8 article-title: Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays publication-title: Scientific Reports – year: 2022 article-title: Electrical Reliability of Flexible Low-Temperature Polycrystalline Oxide Thin-Film Transistors Under Mechanical Stress publication-title: IEEE Transactions on Electron Devices – volume: 14 start-page: 12863 issue: 10 year: 2022 end-page: 12872 article-title: Highly Reliable Flexible Device with a Charge Compensation Layer publication-title: ACS Applied Materials & Interfaces – volume: 57 start-page: 744 issue: 19 year: 2021 end-page: 746 article-title: Improved charging phenomenon with a modified barrier structure for flexible displays fabricated on polyimide substrates publication-title: Electronics Letters – volume: 31 start-page: 1404 issue: 12 year: 2010 end-page: 1406 article-title: Comparative study on light-induced bias stress instability of IGZO transistors with SiNx and SiO gate dielectrics publication-title: IEEE Electron Device Lett. – volume: 88 start-page: 1412 issue: 7 year: 2011 end-page: 1416 article-title: Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress publication-title: Microelectronic Eng. – volume: 11 issue: 4 year: 2010 article-title: Present status of amorphous In-Ga-Zn-O thin-film transistors publication-title: Science and Technology of Advanced Materials – volume: 11 start-page: 1 issue: 1 year: 2021 end-page: 8 article-title: Effects of polyimide curing on image sticking behaviors of flexible displays publication-title: Scientific reports – volume: 16 start-page: 4961 issue: 3 year: 2022 end-page: 4971 article-title: Ultraviolet-assisted low-thermal-budget-driven α-InGaZnO thin films for high-performance transistors and logic circuits publication-title: ACS nano – volume: 19 start-page: 16 issue: 1 year: 2011 end-page: 20 article-title: Amorphous-oxide TFT backplane for large-sized AMOLED TVs publication-title: Journal of the Society for Information Display – ident: e_1_2_1_4_1 doi: 10.1088/1468-6996/11/4/044305 – ident: e_1_2_1_3_1 doi: 10.1038/s41598-021-87950-0 – ident: e_1_2_1_7_1 doi: 10.1038/s41598-021-01364-6 – ident: e_1_2_1_2_1 doi: 10.1021/acsami.1c24820 – ident: e_1_2_1_5_1 doi: 10.1109/TED.2022.3229292 – ident: e_1_2_1_6_1 doi: 10.1889/JSID19.1.16 – ident: e_1_2_1_8_1 doi: 10.1049/ell2.12239 – ident: e_1_2_1_9_1 doi: 10.1016/j.mee.2011.03.069 – ident: e_1_2_1_10_1 doi: 10.1109/LED.2010.2073439 – ident: e_1_2_1_11_1 doi: 10.1021/acsnano.2c01286 |
| SSID | ssj0033449 |
| Score | 2.3256962 |
| Snippet | This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N2O plasma... This study investigates the abnormal reliability degradations observed under positive bias temperature stress (PBTS) in a‐IGZO TFTs treated by N 2 O plasma... |
| SourceID | proquest crossref wiley |
| SourceType | Aggregation Database Index Database Publisher |
| StartPage | 1762 |
| SubjectTerms | a‐IGZO TFTs Indium gallium zinc oxide Mass production N2O plasma treatment Nitrous oxide PBTS Performance degradation Reliability XPS |
| Title | P‐97: Improved Electrical Performance and Realiability of a‐IGZO TFT by N2O Plasma Treatment Optimization |
| URI | https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fsdtp.17914 https://www.proquest.com/docview/3085971872 |
| Volume | 55 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3LjtMwFLXKzAYWiKcoDMgSrBhlmNhJXLMb0ZYO6rQVSaWKTeTEjhBSm4q2i7LiE_gqPoQv4fqRx4xGo4FNlLqNFfme3od9fIzQGxJogcqMeCLkygsKX3gZRGqPZxkNRVj0SK6nBi4m0WgefFqEi07nd4u1tNtmJ_mPa_eV_I9VoQ3sqnfJ_oNl606hAe7BvnAFC8P1Vjae1VQFznRpb2cIIIUcmMNtzPjPruwM-Kz0zIahxJrFdVH3cf7xy_Q4GSY6I52QqT7PaLMUx0lNRZ-Ce1m6fZvtpDY-71-ZWYz3S80G2y3dApZhIhi1WP1Ka7FWrUUke57zaF9-27kwahaprBMa7dVmVwM4_mp_HCv4OiurZscm6pflvnRERzeRQYKGcHVLd9n245xpXdGFjWKmjfiRpuU5fXHn260E8CUMW0ftV0FAVR_DawOKFajdyO36RAu5Bk3YrKgCk2k6nI_HaTJYJHfQIWFM0wUOz_oX47jKCSgNXCHm3rsWyiXvmr4vp0ZNvdOumkzakzxA9129gs8s-B6ijlo9QvdaKpaP0XL25-cvzt7jCn64gR9uwQ8D_HAbfrgssIBnNfAwAA9newzAwxZ4uAYebgPvCZoPB8mHkedO8fByyN0DKN8KiIqCK-ZnsjjlRKqc5TIqTiPwDyEtVI8VUhQcvEIgSCQVk_CgpIpCPOGSPkUHq3Klnml9gZ5ixM-pyIsg4pKLPJTEp1JCFR_ktIteVwOYrq1YS2pluUmqhzk1w9xFR9XYpu7PvEmpFvqDPI2RLnprxvuGHtK4n8zM3fOb-3qB7jZIP0IH2-879RKS2G32yiHkL65En_o |
| linkProvider | EBSCOhost |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=P%E2%80%9097%3A+Improved+Electrical+Performance+and+Realiability+of+a%E2%80%90IGZO+TFT+by+N2O+Plasma+Treatment+Optimization&rft.jtitle=SID+International+Symposium+Digest+of+technical+papers&rft.au=Kim%2C+Hyojung&rft.au=Sung%2C+Hyesun&rft.au=Shim%2C+Seungbo&rft.au=Lee%2C+Dooyoul&rft.date=2024-06-01&rft.pub=Wiley+Subscription+Services%2C+Inc&rft.issn=0097-966X&rft.eissn=2168-0159&rft.volume=55&rft.issue=1&rft.spage=1762&rft.epage=1765&rft_id=info:doi/10.1002%2Fsdtp.17914&rft.externalDBID=NO_FULL_TEXT |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0097-966X&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0097-966X&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0097-966X&client=summon |