Electrical and Optical Response of a Conducting Polymer Gas Sensor

This work deals with the electrical and optical response of poly (o-methoxyaniline) (POMA) thin films exposed to nitrogen and nitrogen with methanol. A low cost apparatus was developed for the optical assessment of the presence of methanol in an ambient. It is shown that thick POMA films exhibits a...

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Published inECS transactions Vol. 14; no. 1; pp. 21 - 26
Main Authors Lima, John Paul H., De Andrade, Adnei M.
Format Journal Article
LanguageEnglish
Published 22.08.2008
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Abstract This work deals with the electrical and optical response of poly (o-methoxyaniline) (POMA) thin films exposed to nitrogen and nitrogen with methanol. A low cost apparatus was developed for the optical assessment of the presence of methanol in an ambient. It is shown that thick POMA films exhibits a wide optical absorption variation when in presence of methanol. It was observed that the optical absorption characteristics return to the initial condition when methanol exposition ceases. Electrical response of a photoresistor to methanol showed larger relative variations but also presented large noise interference. A residual drift in the resistance is presented after every cycle and it need to be better evaluated.
AbstractList This work deals with the electrical and optical response of poly (o-methoxyaniline) (POMA) thin films exposed to nitrogen and nitrogen with methanol. A low cost apparatus was developed for the optical assessment of the presence of methanol in an ambient. It is shown that thick POMA films exhibits a wide optical absorption variation when in presence of methanol. It was observed that the optical absorption characteristics return to the initial condition when methanol exposition ceases. Electrical response of a photoresistor to methanol showed larger relative variations but also presented large noise interference. A residual drift in the resistance is presented after every cycle and it need to be better evaluated.
Author Lima, John Paul H.
De Andrade, Adnei M.
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