Analytical modeling of CV and I-V characteristics in p-GaN gate HEMTs based on the unified 2DEG density expression

• Published in: Microelectronics and reliability Vol. 171; p. 115789
• Main Authors: Zhang, Lili, Yin, Yanan, Qiu, Yiwu, Wang, Tao, Zhang, Pingwei, Zhou, Xinjie
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2025
• Subjects: C-V and I-V characteristics; p-GaN gate high electron mobility transistors; Physics-based analytical model; Two-dimensional electron gas charge density; Physics-based analytical model; C-V and I-V characteristics; p-GaN gate high electron mobility transistors; Two-dimensional electron gas charge density

This work proposes a physics-based analytical model for p-GaN gate high electron mobility transistors (HEMTs), developed through a self-consistent solution of the Schrödinger-Poisson equations. The model explicitly accounts for voltage distribution across the device, focusing on voltage drops across...