Analytical modeling of CV and I-V characteristics in p-GaN gate HEMTs based on the unified 2DEG density expression - Zhang, Lili; Yin, Yanan; Qiu, Yiwu; Wang, Tao; Zhang, Pingwei; Zhou, Xinjie (Microelectronics and reliability, 2025)
Keywords: C-V and I-V characteristics; p-GaN gate high electron mobility transistors; Physics-based analytical model; Two-dimensional electron gas charge density; Physics-based analytical model; C-V and I-V characteristics; p-GaN gate high electron mobility transistors; Two-dimensional electron gas charge density