First-Principles-Based Insight into Electrochemical Reactivity in a Cobalt-Carbonate-Hydrate Pseudocapacitor

• Published in: arXiv.org
• Main Authors: Oqmhula, Kenji, Toma, Takahiro, Maezono, Ryo, Hongo, Kenta
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 21.12.2022
• Subjects: Anisotropy; Bonding strength; Calomel electrode; Crystals; Electric potential; Electromotive forces; First principles; Hydrogen bonds; Physics - Materials Science; Simulation; Structural analysis
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.2212.10814

Cobalt carbonate hydroxide (CCH) is a pseudocapacitive material with remarkably high capacitance and cycle stability. Previously, it was reported that CCH pseudocapacitive materials are orthorhombic in nature. Recent structural characterization has revealed that they are hexagonal in nature; however, their H positions still remain unclear. In this work, we carried out first-principles simulations to identify the H positions. Through the simulations, we could consider various fundamental deprotonation reactions inside the crystal and computationally evaluate the electromotive forces (EMF) of the deprotonation (\(V_\mathrm{dp}\)). Compared with the experimental potential window of the reaction (\(< 0.6\) V (vs. saturated calomel electrode (SCE))), the computed \(V_\mathrm{dp}\) (vs. SCE) value (\(3.05\) V) was beyond the potential window, indicating that deprotonation never occurred inside the crystal. This may be attributed to the strongly formed hydrogen-bonds (H-bonds) in the crystal, thereby leading to the structural stabilization. We further investigated the crystal anisotropy in an actual capacitive material by considering the growth mechanism of the CCH crystal. By associating our X-ray diffraction (XRD) peak simulations with experimental structural analysis, we found that the H-bonds formed between CCH \(\{(\bar{1}\bar{1}\bar{1}), (2\bar{1}\bar{1}), (2\bar{1}1)\}\) planes (approximately parallel to \(ab\)-plane) can result in 1-D growth (stacked along with \(c\)-axis).