Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

• Main Authors: Talukder, A, Kashem, M, Hafiz, M, Khan, R, Dirisaglik, F, Silva, H, Gokirmak, A
• Format: Journal Article
• Language: English
• Published: 09.01.2024
• Subjects: Physics - Applied Physics

We electrically characterized melt-quenched amorphized Ge2Sb2Te5 (GST) phase-change memory cells of 20 nm thickness, ~66-124 nm width and ~100-600 nm length with and without photoexcitation in 80-275 K temperature range. The cells show distinctly different current-voltage characteristics in the low-...