Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers

• Main Authors: Tao, Zui, Shen, Bowen, Jiang, Shengwei, Li, Tingxin, Li, Lizhong, Ma, Liguo, Zhao, Wenjin, Hu, Jenny, Pistunova, Kateryna, Watanabe, Kenji, Taniguchi, Takashi, Heinz, Tony F, Mak, Kin Fai, Shan, Jie
• Format: Journal Article
• Language: English
• Published: 15.08.2022
• Subjects: Physics - Materials Science; Physics - Mesoscale and Nanoscale Physics; Physics - Strongly Correlated Electrons
• DOI: 10.48550/arxiv.2208.07452

Moir\'e materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moir\'e materials. It is thought to arise from the interaction-driven valley polarization of the narrow moir\'e bands. Here, we show surprisingly that the newly discovered QAH state in AB-stacked MoTe2/WSe2 moir\'e bilayers is not valley-polarized but valley-coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (anti-aligned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moir\'e materials with strong electronic correlations and spin-orbit interactions for exotic topological states.