Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

• Published in: arXiv.org
• Main Authors: Strikha, Maksym V, Kurchak, Anatolii I, Morozovska, Anna N
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 22.09.2019
• Subjects: Augers; Capacitors; Chalcogenides; Current carriers; Dependence; Electric potential; Electron recombination; Excitons; Free electrons; Mathematical analysis; Molybdenum disulfide; Monolayers; Optoelectronics; Physics - Materials Science; Physics - Mesoscale and Nanoscale Physics; Transition metal compounds; Two dimensional analysis; Two dimensional models; Voltage

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and WSe2 monoatomic layers can reach values close to unity when...