Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend...
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Main Authors | , , , , , , , , , , , , , , , , , , , , , , , , , , |
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Abstract | The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 {\mu}m pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region. |
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AbstractList | The proof-of-concept prototype of the Picosecond Avalanche Detector, a
multi-PN junction monolithic silicon detector with continuous gain layer deep
in the sensor depleted region, was tested with a beam of 180 GeV pions at the
CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend
electronics and hexagonal pixels with 100 {\mu}m pitch. At a sensor bias
voltage of 125 V, the detector provides full efficiency and average time
resolution of 30, 25 and 17 ps in the overall pixel area for a power
consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype
the time resolution depends significantly on the distance from the center of
the pixel, varying at the highest power consumption measured between 13 ps at
the center of the pixel and 25 ps in the inter-pixel region. The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 {\mu}m pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region. |
Author | Iacobucci, G Rücker, H Fenoglio, C A Saidi, J Gonzalez-Sevilla, S Cardella, R Kotitsa, R Zambito, S Cadoux, F Martinelli, F Trusch, A Cardarelli, R Munker, M Picardi, A M Vicente Barreto Pinto Gurimskaya, Y J Sabater Iglesias Favre, Y Magliocca, C Débieux, S Moretti, T Paolozzi, L Pizarro-Medina, A Nessi, M Ferrere, D Valerio, P Milanesio, M |
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BackLink | https://doi.org/10.48550/arXiv.2208.11019$$DView paper in arXiv https://doi.org/10.1088/1748-0221/17/10/P10040$$DView published paper (Access to full text may be restricted) |
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Snippet | The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the... The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the... |
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SubjectTerms | Avalanches Low noise P-n junctions Physics - Instrumentation and Detectors Pions Pixels Power consumption Prototypes Synchrotrons |
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Title | Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype |
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