Non-Linear Thermovoltage in a Single-Electron Transistor

We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes. Using a model which accounts for co-tunneling, we find excellent agreement with the experimental data with no free parameters even when the tempe...

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Main Authors Erdman, Paolo A, Peltonen, Joonas T, Bhandari, Bibek, Dutta, Bivas, Courtois, Hervé, Fazio, Rosario, Taddei, Fabio, Pekola, Jukka P
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 16.12.2018
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Abstract We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes. Using a model which accounts for co-tunneling, we find excellent agreement with the experimental data with no free parameters even when the temperature difference is larger than the average temperature (far-from-linear regime). This allows us to confirm the sensitivity of the thermovoltage on co-tunneling and to find that in the non-linear regime the temperature of the metallic island is a crucial parameter. Surprisingly, the metallic island tends to overheat even at zero net charge current, resulting in a reduction of the thermovoltage.
AbstractList We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes. Using a model which accounts for co-tunneling, we find excellent agreement with the experimental data with no free parameters even when the temperature difference is larger than the average temperature (far-from-linear regime). This allows us to confirm the sensitivity of the thermovoltage on co-tunneling and to find that in the non-linear regime the temperature of the metallic island is a crucial parameter. Surprisingly, the metallic island tends to overheat even at zero net charge current, resulting in a reduction of the thermovoltage.
Phys. Rev. B 99, 165405 (2019) We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes. Using a model which accounts for co-tunneling, we find excellent agreement with the experimental data with no free parameters even when the temperature difference is larger than the average temperature (far-from-linear regime). This allows us to confirm the sensitivity of the thermovoltage on co-tunneling and to find that in the non-linear regime the temperature of the metallic island is a crucial parameter. Surprisingly, the metallic island tends to overheat even at zero net charge current, resulting in a reduction of the thermovoltage.
Author Peltonen, Joonas T
Bhandari, Bibek
Erdman, Paolo A
Fazio, Rosario
Pekola, Jukka P
Courtois, Hervé
Taddei, Fabio
Dutta, Bivas
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BackLink https://doi.org/10.1103/PhysRevB.99.165405$$DView published paper (Access to full text may be restricted)
https://doi.org/10.48550/arXiv.1812.06514$$DView paper in arXiv
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Snippet We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes....
Phys. Rev. B 99, 165405 (2019) We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the...
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Single-electron transistors
Temperature gradients
Thermometers
Transistors
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