Keldysh field theory of dynamical exciton condensation transitions in nonequilibrium electron-hole bilayers
Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in quasi-equilibrium with a reduced effective band gap. Interlayer tu...
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Published in | arXiv.org |
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Main Authors | , , |
Format | Paper Journal Article |
Language | English |
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03.07.2024
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ISSN | 2331-8422 |
DOI | 10.48550/arxiv.2311.04074 |
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Abstract | Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in quasi-equilibrium with a reduced effective band gap. Interlayer tunneling introduces a current and drives the system out of equilibrium. In this work we derive a nonequilibrium field theory description of interlayer excitons in biased electron-hole bilayers. In the large bias limit, we find that p-wave interlayer tunneling reduces the effective band gap and increases the effective temperature for intervalley excitons. We discuss possible experimental implications for InAs/GaSb quantum wells and transition metal dichalcogenide bilayers. |
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AbstractList | Phys. Rev. Lett. 132, 266001 (2024) Recent experiments have realized steady-state electrical injection of
interlayer excitons in electron-hole bilayers subject to a large bias voltage.
In the ideal case in which interlayer tunneling is negligibly weak, the system
is in quasi-equilibrium with a reduced effective band gap. Interlayer tunneling
introduces a current and drives the system out of equilibrium. In this work we
derive a nonequilibrium field theory description of interlayer excitons in
biased electron-hole bilayers. In the large bias limit, we find that p-wave
interlayer tunneling reduces the effective band gap and increases the effective
temperature for intervalley excitons. We discuss possible experimental
implications for InAs/GaSb quantum wells and transition metal dichalcogenide
bilayers. Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in quasi-equilibrium with a reduced effective band gap. Interlayer tunneling introduces a current and drives the system out of equilibrium. In this work we derive a nonequilibrium field theory description of interlayer excitons in biased electron-hole bilayers. In the large bias limit, we find that p-wave interlayer tunneling reduces the effective band gap and increases the effective temperature for intervalley excitons. We discuss possible experimental implications for InAs/GaSb quantum wells and transition metal dichalcogenide bilayers. |
Author | Crépel, Valentin Millis, Andrew J Zeng, Yongxin |
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BackLink | https://doi.org/10.48550/arXiv.2311.04074$$DView paper in arXiv https://doi.org/10.1103/PhysRevLett.132.266001$$DView published paper (Access to full text may be restricted) |
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Snippet | Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the... Phys. Rev. Lett. 132, 266001 (2024) Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject... |
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SubjectTerms | Bias Energy gap Excitons Field theory Holes (electron deficiencies) Interlayers P waves Physics - Mesoscale and Nanoscale Physics Physics - Strongly Correlated Electrons Quantum wells Transition metal compounds |
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Title | Keldysh field theory of dynamical exciton condensation transitions in nonequilibrium electron-hole bilayers |
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