Keldysh field theory of dynamical exciton condensation transitions in nonequilibrium electron-hole bilayers

Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in quasi-equilibrium with a reduced effective band gap. Interlayer tu...

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Published inarXiv.org
Main Authors Zeng, Yongxin, Crépel, Valentin, Millis, Andrew J
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 03.07.2024
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ISSN2331-8422
DOI10.48550/arxiv.2311.04074

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Abstract Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in quasi-equilibrium with a reduced effective band gap. Interlayer tunneling introduces a current and drives the system out of equilibrium. In this work we derive a nonequilibrium field theory description of interlayer excitons in biased electron-hole bilayers. In the large bias limit, we find that p-wave interlayer tunneling reduces the effective band gap and increases the effective temperature for intervalley excitons. We discuss possible experimental implications for InAs/GaSb quantum wells and transition metal dichalcogenide bilayers.
AbstractList Phys. Rev. Lett. 132, 266001 (2024) Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in quasi-equilibrium with a reduced effective band gap. Interlayer tunneling introduces a current and drives the system out of equilibrium. In this work we derive a nonequilibrium field theory description of interlayer excitons in biased electron-hole bilayers. In the large bias limit, we find that p-wave interlayer tunneling reduces the effective band gap and increases the effective temperature for intervalley excitons. We discuss possible experimental implications for InAs/GaSb quantum wells and transition metal dichalcogenide bilayers.
Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in quasi-equilibrium with a reduced effective band gap. Interlayer tunneling introduces a current and drives the system out of equilibrium. In this work we derive a nonequilibrium field theory description of interlayer excitons in biased electron-hole bilayers. In the large bias limit, we find that p-wave interlayer tunneling reduces the effective band gap and increases the effective temperature for intervalley excitons. We discuss possible experimental implications for InAs/GaSb quantum wells and transition metal dichalcogenide bilayers.
Author Crépel, Valentin
Millis, Andrew J
Zeng, Yongxin
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  fullname: Millis, Andrew J
BackLink https://doi.org/10.48550/arXiv.2311.04074$$DView paper in arXiv
https://doi.org/10.1103/PhysRevLett.132.266001$$DView published paper (Access to full text may be restricted)
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Snippet Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the...
Phys. Rev. Lett. 132, 266001 (2024) Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject...
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SubjectTerms Bias
Energy gap
Excitons
Field theory
Holes (electron deficiencies)
Interlayers
P waves
Physics - Mesoscale and Nanoscale Physics
Physics - Strongly Correlated Electrons
Quantum wells
Transition metal compounds
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Title Keldysh field theory of dynamical exciton condensation transitions in nonequilibrium electron-hole bilayers
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