Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect

• Published in: arXiv.org
• Main Authors: Aradhya, Sriharsha V, Rowlands, Graham E, Oh, Junseok, Ralph, Daniel C, Buhrman, Robert A
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 21.06.2016
• Subjects: Computer memory; Computer simulation; Current pulses; Electromagnetism; Error analysis; Hall effect; Physics - Materials Science; Physics - Mesoscale and Nanoscale Physics; Spin dynamics; Switching; Torque; Tunnel junctions; Variations

We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error rates down to \(10^{-5}\), using current pulses as...